IndiumV3, Main, Repository, bibRecord, 013665

Beryllium diffusion in InGaAs/InGaAsP structures grown by gas source molecular beam epitaxy

Identifieur interne : 013665 ( Main/Repository ); précédent : 013664; suivant : 013666

Beryllium diffusion in InGaAs/InGaAsP structures grown by gas source molecular beam epitaxy

Auteurs : RBID : Pascal:00-0184214

Descripteurs français

Pascal (Inist)
- Etude expérimentale, Diffusion(transport), Addition béryllium, Matériau dopé, Recuit thermique rapide, SIMS, Profil profondeur, Impureté interstitielle, Impureté substitutionnelle, Hétérostructure, Composé quaternaire, Composé ternaire, Gallium arséniure, Indium arséniure, Gallium phosphure, Indium phosphure, Matériau semiconducteur, InGaAsP, As Ga In P, InGaAs:Be, 6630J, 6865, 8170J, As Ga In.

English descriptors

KwdEn :
- Beryllium additions, Depth profiles, Diffusion, Doped materials, Experimental study, Gallium arsenides, Gallium phosphides, Heterostructures, Indium arsenides, Indium phosphides, Interstitial impurities, Quaternary compounds, Rapid thermal annealing, SIMS, Semiconductor materials, Substitutional impurities, Ternary compounds.

Abstract

A systematic study of Be post-growth diffusion from buried Be-doped InGaAs layers in undoped InGaAsP layers grown by gas source molecular beam epitaxy was carried out. The experimental structures consisted of a 2000 Å Be-doped (3 x 10¹⁹ cm^-3) In_0.53Ga_0.47As layer sandwiched between 5000 Å undoped In_0.73Ga_0.27As_0.58P_0.42 layers. The samples were subjected to rapid thermal annealing in the temperature range from 700 to 900°C with time durations of 10-240 s. Secondary ion mass spectrometry was employed for a quantitative determination of the Be depth profiles. To explain the obtained experimental results, the kick-out model of substitutional-interstitial diffusion mechanism, involving neutral Be interstitial species and positively charged Ga and In self-interstitial species, has been considered. The Be and self-interstitial diffusivities, the rate coefficient of self-interstitial generation or annihilation, the self-interstitial equilibrium concentration, and the intrinsic carrier concentration were obtained for ternary and quaternary layers as functions of temperature.

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Pascal:00-0184214

Le document en format XML

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<author><name sortKey="Koumetz, S" uniqKey="Koumetz S">S. Koumetz</name>
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<s2>76821 Mont Saint Aignan</s2>
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<country>France</country>
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<author><name sortKey="Valet, O" uniqKey="Valet O">O. Valet</name>
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<author><name sortKey="Marcon, J" uniqKey="Marcon J">J. Marcon</name>
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<author><name sortKey="Ketata, K" uniqKey="Ketata K">K. Ketata</name>
<affiliation wicri:level="4"><inist:fA14 i1="01"><s1>LEMI-UPRES.EA.2654-IUT, Université de Rouen, Rue Lavoisier</s1>
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<orgName type="university">Université de Rouen</orgName>
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<author><name sortKey="Ketata, M" uniqKey="Ketata M">M. Ketata</name>
<affiliation wicri:level="4"><inist:fA14 i1="01"><s1>LEMI-UPRES.EA.2654-IUT, Université de Rouen, Rue Lavoisier</s1>
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<date when="2000">2000</date>
<idno type="stanalyst">PASCAL 00-0184214 INIST</idno>
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<seriesStmt><idno type="ISSN">0921-5107</idno>
<title level="j" type="abbreviated">Mater. sci. eng., B, Solid-state mater. adv. technol.</title>
<title level="j" type="main">Materials science & engineering. B, Solid-state materials for advanced technology</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Beryllium additions</term>
<term>Depth profiles</term>
<term>Diffusion</term>
<term>Doped materials</term>
<term>Experimental study</term>
<term>Gallium arsenides</term>
<term>Gallium phosphides</term>
<term>Heterostructures</term>
<term>Indium arsenides</term>
<term>Indium phosphides</term>
<term>Interstitial impurities</term>
<term>Quaternary compounds</term>
<term>Rapid thermal annealing</term>
<term>SIMS</term>
<term>Semiconductor materials</term>
<term>Substitutional impurities</term>
<term>Ternary compounds</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term>
<term>Diffusion(transport)</term>
<term>Addition béryllium</term>
<term>Matériau dopé</term>
<term>Recuit thermique rapide</term>
<term>SIMS</term>
<term>Profil profondeur</term>
<term>Impureté interstitielle</term>
<term>Impureté substitutionnelle</term>
<term>Hétérostructure</term>
<term>Composé quaternaire</term>
<term>Composé ternaire</term>
<term>Gallium arséniure</term>
<term>Indium arséniure</term>
<term>Gallium phosphure</term>
<term>Indium phosphure</term>
<term>Matériau semiconducteur</term>
<term>InGaAsP</term>
<term>As Ga In P</term>
<term>InGaAs:Be</term>
<term>6630J</term>
<term>6865</term>
<term>8170J</term>
<term>As Ga In</term>
</keywords>
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<front><div type="abstract" xml:lang="en">A systematic study of Be post-growth diffusion from buried Be-doped InGaAs layers in undoped InGaAsP layers grown by gas source molecular beam epitaxy was carried out. The experimental structures consisted of a 2000 Å Be-doped (3 x 10<sup>19</sup>
 cm<sup>-3</sup>
) In<sub>0.53</sub>
Ga<sub>0.47</sub>
As layer sandwiched between 5000 Å undoped In<sub>0.73</sub>
Ga<sub>0.27</sub>
As<sub>0.58</sub>
P<sub>0.42</sub>
 layers. The samples were subjected to rapid thermal annealing in the temperature range from 700 to 900°C with time durations of 10-240 s. Secondary ion mass spectrometry was employed for a quantitative determination of the Be depth profiles. To explain the obtained experimental results, the kick-out model of substitutional-interstitial diffusion mechanism, involving neutral Be interstitial species and positively charged Ga and In self-interstitial species, has been considered. The Be and self-interstitial diffusivities, the rate coefficient of self-interstitial generation or annihilation, the self-interstitial equilibrium concentration, and the intrinsic carrier concentration were obtained for ternary and quaternary layers as functions of temperature.</div>
</front>
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<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0921-5107</s0>
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<fA03 i2="1"><s0>Mater. sci. eng., B, Solid-state mater. adv. technol.</s0>
</fA03>
<fA05><s2>71</s2>
</fA05>
<fA06><s2>1-3</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Beryllium diffusion in InGaAs/InGaAsP structures grown by gas source molecular beam epitaxy</s1>
</fA08>
<fA09 i1="01" i2="1" l="ENG"><s1>European Materials Research Society 1999 Spring Meeting, Symposium F: Process Induced Defects in Semiconductors, June 1-4, 1999, Strasbourg, France</s1>
</fA09>
<fA11 i1="01" i2="1"><s1>KOUMETZ (S.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>VALET (O.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>MARCON (J.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>KETATA (K.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>KETATA (M.)</s1>
</fA11>
<fA12 i1="01" i2="1"><s1>MESLI (A.)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="02" i2="1"><s1>SCHRÖTER (W.)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="03" i2="1"><s1>WEBER (J.)</s1>
<s9>ed.</s9>
</fA12>
<fA14 i1="01"><s1>LEMI-UPRES.EA.2654-IUT, Université de Rouen, Rue Lavoisier</s1>
<s2>76821 Mont Saint Aignan</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</fA14>
<fA18 i1="01" i2="1"><s1>European Materials Research Society</s1>
<s2>Strasbourg</s2>
<s3>FRA</s3>
<s9>patr.</s9>
</fA18>
<fA20><s1>171-174</s1>
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<fA21><s1>2000</s1>
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<fA23 i1="01"><s0>ENG</s0>
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<fA60><s1>P</s1>
<s2>C</s2>
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</fA64>
<fA66 i1="01"><s0>CHE</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>A systematic study of Be post-growth diffusion from buried Be-doped InGaAs layers in undoped InGaAsP layers grown by gas source molecular beam epitaxy was carried out. The experimental structures consisted of a 2000 Å Be-doped (3 x 10<sup>19</sup>
 cm<sup>-3</sup>
) In<sub>0.53</sub>
Ga<sub>0.47</sub>
As layer sandwiched between 5000 Å undoped In<sub>0.73</sub>
Ga<sub>0.27</sub>
As<sub>0.58</sub>
P<sub>0.42</sub>
 layers. The samples were subjected to rapid thermal annealing in the temperature range from 700 to 900°C with time durations of 10-240 s. Secondary ion mass spectrometry was employed for a quantitative determination of the Be depth profiles. To explain the obtained experimental results, the kick-out model of substitutional-interstitial diffusion mechanism, involving neutral Be interstitial species and positively charged Ga and In self-interstitial species, has been considered. The Be and self-interstitial diffusivities, the rate coefficient of self-interstitial generation or annihilation, the self-interstitial equilibrium concentration, and the intrinsic carrier concentration were obtained for ternary and quaternary layers as functions of temperature.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B60F30J</s0>
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<s5>01</s5>
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<fC03 i1="01" i2="3" l="ENG"><s0>Experimental study</s0>
<s5>01</s5>
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<s5>02</s5>
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<s5>02</s5>
</fC03>
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<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Beryllium additions</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Matériau dopé</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Doped materials</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Recuit thermique rapide</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Rapid thermal annealing</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>SIMS</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>SIMS</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Profil profondeur</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Depth profiles</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Impureté interstitielle</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Interstitial impurities</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Impureza intersticial</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Impureté substitutionnelle</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>Substitutional impurities</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Impureza substitucional</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Hétérostructure</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Heterostructures</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Composé quaternaire</s0>
<s5>14</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Quaternary compounds</s0>
<s5>14</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Composé ternaire</s0>
<s5>15</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Ternary compounds</s0>
<s5>15</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Gallium arséniure</s0>
<s2>NK</s2>
<s5>16</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Gallium arsenides</s0>
<s2>NK</s2>
<s5>16</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Indium arséniure</s0>
<s2>NK</s2>
<s5>17</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Indium arsenides</s0>
<s2>NK</s2>
<s5>17</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Gallium phosphure</s0>
<s2>NK</s2>
<s5>19</s5>
</fC03>
<fC03 i1="15" i2="3" l="ENG"><s0>Gallium phosphides</s0>
<s2>NK</s2>
<s5>19</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Indium phosphure</s0>
<s2>NK</s2>
<s5>20</s5>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Indium phosphides</s0>
<s2>NK</s2>
<s5>20</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Matériau semiconducteur</s0>
<s5>21</s5>
</fC03>
<fC03 i1="17" i2="3" l="ENG"><s0>Semiconductor materials</s0>
<s5>21</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>InGaAsP</s0>
<s4>INC</s4>
<s5>53</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>As Ga In P</s0>
<s4>INC</s4>
<s5>54</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>InGaAs:Be</s0>
<s4>INC</s4>
<s5>55</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>6630J</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>56</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>6865</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>57</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>8170J</s0>
<s2>PAC</s2>
<s4>INC</s4>
<s5>58</s5>
</fC03>
<fC03 i1="24" i2="3" l="FRE"><s0>As Ga In</s0>
<s4>INC</s4>
<s5>92</s5>
</fC03>
<fC07 i1="01" i2="3" l="FRE"><s0>Composé minéral</s0>
<s5>48</s5>
</fC07>
<fC07 i1="01" i2="3" l="ENG"><s0>Inorganic compounds</s0>
<s5>48</s5>
</fC07>
<fN21><s1>136</s1>
</fN21>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>European Materials Research Society 1999 Spring Meeting, Symposium F: Process Induced Defects in Semiconductors</s1>
<s3>Strasbourg FRA</s3>
<s4>1999-06-01</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

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Beryllium diffusion in InGaAs/InGaAsP structures grown by gas source molecular beam epitaxy

Beryllium diffusion in InGaAs/InGaAsP structures grown by gas source molecular beam epitaxy

Descripteurs français

English descriptors

Abstract

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